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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS4126/D
Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS4126
1 2 3
CASE 29-04, STYLE 1 TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value -25 -25 -4.0 -200 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (IC = -1.0 mA, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mA, IE = 0) Emitter - Base Breakdown Voltage (IC = 0, IE = -10 mA) Collector Cutoff Current (VCB = -20 V, IE = 0) Emitter Cutoff Current (VEB = -3.0 V, IC = 0) V(BR)CEO -25 V(BR)CBO -25 V(BR)EBO -4.0 ICBO -- IEBO -- -50 -50 nAdc -- nAdc -- Vdc -- Vdc Vdc
(Replaces MPS4125/D)
Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997
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MPS4126
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = -2.0 mA, VCE = -1.0 V) (IC = -50 mA, VCE = -1.0 V) Collector - Emitter Saturation Voltage (IC = -50 mA, IB = -5.0 mA) Base - Emitter Saturation Voltage (IC = -50 mA, IB = -5.0 mA) hFE 120 60 VCE(sat) -- VBE(sat) -- -0.95 -0.4 Vdc 360 -- Vdc --
SMALL- SIGNAL CHARACTERISTICS
Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -20 V, f = 100 MHz) Output Capacitance (VCB = -5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 V, IC = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = -2.0 mA, VCE = 1.0 V, f = 1.0 kHz) Noise Figure (IC = -100 mA, VCE = -5.0 V, RS = 1.0 k, f = 1.0 kHz) fT 170 Cob -- Cib -- hfe 120 NF -- 4.0 480 dB 11.5 -- 4.5 pF -- pF MHz
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
MPS4126
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
A R P
SEATING PLANE
B
F
L K D
XX G H V
1
J
C N N
SECTION X-X
DIM A B C D F G H J K L N P R V
CASE 029-04 (TO-226AA) ISSUE AD
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
Motorola Small-Signal Transistors, FETs and Diodes Device Data
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MPS4126
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MPS4126/D Motorola Small-Signal Transistors, FETs and Diodes Device Data

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